Designing molecules that could be used for information processing and information storage is one of the main challenges in molecular materials science. Molecules that are suitable for such applications must be bistable: a characteristic that allows the presence of two different stable electronic states over a certain range of external perturbation. Typical examples of molecular species that exhibit such bistability are the spin-crossover (SCO) compounds. Since the discovery of the first SCO compound,[1] a variety of d n (n = 4-7) transition metal compounds exhibiting bistability between the high-spin (HS) and low-spin (LS) states have been reported. [2][3][4] Spin transition can be induced by variation of temperature, pressure, or illumination.[2-9] In general, temperature-dependent SCO behavior involves reversible spin transition from LS to HS upon heating and from HS to LS upon cooling.Although the SCO transition is due to the electronic structure of the single molecule and can be observed even in

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350 C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices have been fabricated, reporting a carrier mobility of 460 cm 2 /V s and 121 cm 2 /V s for electrons and holes, respectively. The devices were peeled off and transferred onto a polyethylene naphthalate foil to achieve flexible devices. CMOS inverters were also fabricated and show full output swing. Printed flexible electronics have received considerable attention because of the low-cost and applications in displays, sensors, and radio-frequency identification (RFID) tags on flexible substrates. Organic semiconductors offer a lowtemperature printing process of TFTs on plastic substrates. 1 However, the carrier mobility and reliability are much inferior in comparison with Si devices. Indium Gallium Zinc Oxide (IGZO), as a metal oxide semiconductor, shows higher electron carrier mobility than that of organic semiconductors, but it is impossible to make both PMOS and NMOS TFTs using the same metal oxide. 2 Transferring of CMOS-SOI chips 3 and amorphous Si (a-Si) transistors on plastics by laser release 4 have been reported. However, the former has cost and technical issues since the limited size of the wafer and pick and place process, and in the latter, the electrical performance is low, although the laser release technique requires less cost. Printing of silicon, however, could provide high carrier mobility 5,6 and at the same time the possibility of fabricating NMOS and PMOS TFTs in the same process on a large area substrate. Silicon can be printed using liquid silicon, 5 which is a mixture of ultraviolet (UV)-irradiated cyclopentasilane (CPS) and a solvent. After forming a-Si by sintering spin-coated liquid-Si at 430 C followed by dehydrogenation, poly-Si TFTs 5 and single-grain Si TFTs 6 have been fabricated with excimer-laser crystallization. Although mobilities of the resultant TFTs are much superior to those of organic TFTs, the dehydrogenation process with a temperature of more than 550 C is not suitable for polymeric substrates. In this paper, we report in the fabrication of singlegrain Si TFTs on a polyimide-coated substrate with a maximum process temperature of 350 C using liquid-Si, which was deposited by doctor-blade coating, which is compatible with a roll-to-roll process. The carrier mobility is 460 cm 2 /V s and 121 cm 2 /V s for electrons and holes, respectively. The devices were peeled off and transferred onto a Polyethylene naphthalate (PEN) foil to achieve flexible devices.As shown in Fig. 1, first, a quasi-plastic substrate is prepared with spin-coating 10-lm-thick polyimide layer on top of a supporting crystalline Si substrate, which is subsequently cured at 400 C. Then, by the l-Czochralski process, 7 small indentations called "grain-filters" (100 nm diamet...

The first mixed-valence coordination polymer indicating ferroelectric properties, {[CuI4CuII(Et2dtc)2Cl3][CuII(Et2dtc)2]2(FeCl4)}n (Et2dtc- = diethyldithiocarbamate), has been synthesized and crystallographically characterized. This complex has a two-dimensional infinite square lattice structure, including both Cu(I) and Cu(II) ions, which is confirmed by XPS and SQUID measurements. In addition, the ferroelectric behaviors are revealed by the dielectric measurements with a LCR meter and a ferroelectric tester.

Designing molecules that could be used for information processing and information storage is one of the main challenges in molecular materials science. Molecules that are suitable for such applications must be bistable: a characteristic that allows the presence of two different stable electronic states over a certain range of external perturbation. Typical examples of molecular species that exhibit such bistability are the spin-crossover (SCO) compounds. Since the discovery of the first SCO compound,[1] a variety of d n (n = 4-7) transition metal compounds exhibiting bistability between the high-spin (HS) and low-spin (LS) states have been reported. [2][3][4] Spin transition can be induced by variation of temperature, pressure, or illumination.[2-9] In general, temperature-dependent SCO behavior involves reversible spin transition from LS to HS upon heating and from HS to LS upon cooling.Although the SCO transition is due to the electronic structure of the single molecule and can be observed even in

A banana-shaped spin-crossover (SCO) cobalt(II) complex [Co(C16-terpy)2](BPh4)2 (1) with long alkyl chains, based on a terpyridine frame, was synthesized. Compound 1 exhibited very gradual SCO behavior and changes in the dielectric constant. This shows a way in which SCO materials can be used in electronic devices.