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Magnetization reversal and magnetoresistance behavior of perpendicularly magnetized [Co/Pd]4/Au/[Co/Pd]2 nanowires J. Appl. Phys. 112, 073902 (2012) Electric-field control of CoFeB/IrMn exchange bias system J. Appl. Phys. 112, 064120 (2012) Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in threeterminal geometry Appl. Phys. Lett. 101, 132411 (2012) Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by halfmetallicity of Co2MnSi and coherent tunneling Appl. Phys. Lett. 101, 132418 (2012) Interface mediated ferromagnetism in bulk CuO/Cu2O composites Appl.

We investigated the dependence of perpendicular magnetic anisotropy in CoFeB-MgO on the MgO layer thickness. Magnetization curves show that a clear perpendicular magnetic easy axis is obtainable in a 1.5-nm thick CoFeB layer by depositing MgO of more than three monolayers. We investigated anisotropy in CoFeB-MgO deposited on four different buffer layers. Results show that a counter interface of CoFeB-nonmagnetic metal affects the perpendicular anisotropy of CoFeB/MgO.

Thermal stability factor  of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses,  is virtually independent of the junction sizes of 48-81 nm in diameter. The values of  increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.