Two types of tetragonal zirconia polycrystals (TZP), a ceria-stabilized TZP/Al2O3 nanocomposite (CZA) and a conventional yttria-stabilized TZP (Y-TZP), were sandblasted with 70-μm alumina and 125-μm SiC powders, then partially annealed at 500-1200℃ for five minutes. Monoclinic ZrO2 content was determined by X-ray diffractometry and Raman spectroscopy. Biaxial flexure test was conducted on the specimens before and after the treatments. Monoclinic ZrO2 content and biaxial flexure strength increased after sandblasting, but decreased after heat treatment. However, in both cases, the strength of CZA was higher than that of Y-TZP. Raman spectroscopy showed that a compressive stress field was introduced on the sample surface after sandblasting. It was concluded that sandblasting induced tetragonal-to-monoclinic phase transformation and that the volume expansion associated with such a phase transformation gave rise to an increase in compressive stress on the surface of CZA. With the occurrence of such a strengthening mechanism in the microstructure, it was concluded that CZA was more susceptible to stress-induced transformation than Y-TZP.

We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal stability factor (Δ) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11 nm.

We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

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We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density Jth by one order, whereas Jth increases only slightly with further reducing the device size down to 30 nm. No significant increase in Jth is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included.