SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor J.Effects of H + implantation ͑ഛ5 ϫ 10 16 cm −2 ͒ on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin ͑ϳ30 nm͒ SiGe-on-insulator ͑SGOI͒ virtual substrates. High-dose ͑ജ10 15 cm −2 ͒ implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGe/ buried SiO 2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing ͑500°C for 30 min and 850°C for 60 min͒ before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.

No abstract

No abstract

No abstract

No abstract