Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+-implantation-assisted oxidation

Sadoh, Taizoh; Matsuura, Ryo; Miyao, Masanobu; Ninomiya, Masaharu; Nakamae, M.; Enokida, Toyotsugu

doi:10.1063/1.1935028

Cited by 15 publications

(11 citation statements)

References 12 publications

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“…The effect of ions on a-Si can be understood in terms of their ability to introduce and remove the defect structures necessary for efficient transport of hydrogen through the network. Sadot et al [38] reported stress relaxations of deposited SiGe layers during H + implantation as a result of bond breaking. Ion irradiation stimulated the release of hydrogen implanted in Si from strongly-bonded configurations resulting in diffusion and attachment to vacancy defects [39].…”

Section: Introductionmentioning

confidence: 99%

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Kuznetsov

Gleeson

Bijkerk

2013

Journal of Applied Physics

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The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H 2 filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Moon -Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H 2-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces. This affect is attributed to the introduction of active transport of hydrogen from the H 2 filled blisters across the outermost Moon -Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.

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Section: Introductionmentioning

confidence: 99%

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Kuznetsov

Gleeson

Bijkerk

2013

Journal of Applied Physics

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“…However, Sadoh et al [10] reported that implantation of H ions enhanced the oxidation rate, which was caused by the radiation-induced damage. In their experiment, the thickness of surface Si and SiGe layer on SOI is only 85 nm, so the SiO 2 forming during thermal oxidation is not thick enough to prevent the later oxidation of SiGe layer obviously.…”

Section: Composition Analysismentioning

confidence: 98%

Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

Cheng

Liu

Feng

2007

Applied Surface Science

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“…High temperature oxidation (N1100°C) process is usually used to induce Ge condensation process of SiGe/SOI structures, which is employed to fabricate strained Si on SGOI [4][5][6][7]. On the other hand, low temperature oxidation (b1000°C) process of SiGe has not been clarified yet, even though it is used as isolation process of SiGe devices as reported by Nishisaka et al [8].…”

Section: Introductionmentioning

confidence: 95%