Magnetic structure, tetragonality, and the spin-flip transition for an L1(0)-type MnPt ordered alloy were studied by neutron scattering using a single-crystal specimen. Tetragonality of the lattice showed strong correlation with the spin-flip transition. Although the spin-flip transition looks like a gradual change of the easy axis in the temperature range between 580 and 770 K, two modes of magnon-gap peaks with different energies were observed in this transition temperature range. Thus, the crystal consists of two regions with different anisotropy energies and the volume fractions of these regions with different spin directions change gradually with temperature. The tetragonality and spin-flip transition are discussed using the hard-sphere model for atomic radii of Pt and Mn. The Invar effect of Mn atoms is proposed using high- and low-spin transitions of Mn moments in analogy with the two-γ model of Fe moments in FeNi Invar alloy.

Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn).