The current drivability of III‐V double gate MOSFETs with various channel materials are investigated by using quantum‐corrected Monte Carlo simulation. The InGaAs channel shows the largest electron injection velocity vinj. However, the backward currents by alloy scattering (AL) in the channel and by non‐polar optical phonon scattering (NPOP) in the drain decrease the average electron velocity vs from vinj even at Lg of 10 nm. In the GaAs channel, in addition to the decrease in vinj by the L valleys conduction, NPOP and polar optical phonon scattering (POP) cause the backward currents, which decrease vs further from vinj. The InP channel shows the smallest vinj, however, the backward current by POP in the channel is small and that by NPOP in the drain is almost negligible. Therefore vs is almost reaching vinj at Lg of 10 nm. On the other hand, the electron density nb is largest in the InP channel owing to the large Cgs. Eventually, the InP channel shows the largest Ids. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)