This paper examines the characteristics of the poly-Si grains formed by ELA with the energy density from 75 mJ/ cm2 to 400 mJ/cm2, and discusses the change of the crystal growth mechanism of the recrystallized poly-Si dependent on the energy density. For the energy density from 250 mJ/cm2 to 350 mJ/ cm2 , the disk-shaped grains are observed. The dependences of the area ratio of disk-shaped grain both on the energy density and on the shot number are examined. From these results, the role of the disk-shaped grains for the change of the crystal growth mechanism dependent on the energy density is clarified.

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Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N2 gas concentration was controlled at 70%. The optical band gap of a-CNx:H films was about 0.75 eV. The a-CNx:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (ETH) of 10, 13 and 12 V/μm, respectively. The a-CNx:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low ETH of 12 V/μm, eliminating the need for high-cost p-Si substrates.