This study aims to improve the crystalline quality of 650-nm GaIn0.17N/GaIn0.38N red-emitting multiple quantum wells (MQWs) fabricated on a ScAlMgO4 (SCAM) substrate. When using the SCAM substrate, the diffusion and/or penetration of impurities, including Mg, Sc, O, and Al, from the SCAM substrate poses as a challenge. To address this issue, we introduced an Al0.74In0.26N layer between the SCAM substrate and MQWs, which was lattice-matched to the substrate. The Al0.74In0.26N layer effectively blocked the diffusion of impurities from the SCAM substrate into the adjacent layers during the metal-organic vapor epitaxy (MOVPE) growth. For further suppression, a thick AlN layer was deposited on the back of the SCAM substrate before the MOVPE growth, which effectively suppressed impurity penetration from the growth surface. The structure proposed in this study improved the crystallinity and the surface roughness of MQWs, resulting in the improvement of internal quantum efficiency by approximately three times compared to that of the conventional sample.

No abstract

In this paper, a hybrid numerical simulation tool is introduced and performed for GaInN-based light-emitting diodes (LEDs) with metal-embedded nanostructure to theoretically predict external quantum efficiency (EQE), which composed of finite-difference time-domain, rigorous coupled wave analysis, and ray tracing. The advantage is that the proposed method provides results supported by sufficient physical background within a reasonable calculation time. From the simulation results, the EQE of LED with Ag-nanoparticles embedded nanostructure is expected to be enhanced by as high as ∼1.6 times the conventional LED device in theory.