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Field-effect active plasmonics for ultracompact electro-optic switching Appl. Phys. Lett. 101, 121113 (2012) Quantum optical switches and beam splitters with surface plasmons J. Appl. Phys. 112, 054304 (2012) Liquid-based infrared optical switch Appl. Phys. Lett. 101, 041104 (2012) Proposal of an optical nonvolatile switch utilizing surface plasmon antenna resonance controlled by giant magnetoresistance Appl.

Doping with Be was found to be very effective for shortening of carrier lifetime in InGaAs/InAlAs multiple quantum wells (MQWs) grown at low temperature by molecular beam epitaxy. The MQW materials have carrier lifetimes controllable from a few tens of picoseconds to 1 ps in the 1.55-μm wavelength region, coupled with a large optical nonlinearity due to an excitonic feature, implying applicability to ultrafast optical devices in the fiber-optic communication. The carrier lifetime was measured by a time-resolved pump-probe method using an optical source based on a 1.535-μm semiconductor laser. We also investigated the resistivity, carrier density, and Hall mobility in the MQWs.

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