The phenomenon of dopant dose loss through trapping at the Si–SiO2 interface has important consequences for metal–oxide–semiconductor device fabrication. It represents also a challenge to analytical techniques, since the trapped dopants appear to exist in one or a few monolayers thickness at the interface. In this work, we report on a complementary approach, using both electrical device data and accurate process modeling, as well as analytical dopant profiling with secondary ion mass spectroscopy, to investigate important features of the phenomenon, such as dose dependence, detrapping, and transient enhanced diffusion effects. This approach enabled the development of dose loss models suitable for design of current and future complementary metal–oxide–semiconductor technologies.

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Schottky diodes were fabricated on p~type Cdln 2 Te 4 using evaporated aluminum dots. The forward and reverse current-voltage characteristics of these Schottky barrier devices were studied as a function of temperature. An analysis of this data allows the determination of the barrier height, the behavior of traps, and the current transport mechanism of the devices. The forward conduction mechanism appears to be a multistep tunneling process. The reverse transport is dominated by a diffusion process. The height of the barrier associated with the junction as revealed by the reverse 1-V characteristics is 0.4 e V, The conductivity type of the crystals can be changed from n type to p type in a manner similar to CdTe.

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