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Schottky diodes were fabricated on p~type Cdln 2 Te 4 using evaporated aluminum dots. The forward and reverse current-voltage characteristics of these Schottky barrier devices were studied as a function of temperature. An analysis of this data allows the determination of the barrier height, the behavior of traps, and the current transport mechanism of the devices. The forward conduction mechanism appears to be a multistep tunneling process. The reverse transport is dominated by a diffusion process. The height of the barrier associated with the junction as revealed by the reverse 1-V characteristics is 0.4 e V, The conductivity type of the crystals can be changed from n type to p type in a manner similar to CdTe.

The electronic and optical properties of n‐type HgIn2Te4 crystals are investigated. Carrier concentration, mobility, and resistivity are measured over the temperature range of 90 to 300 K. The room temperature carrier concentration is determined to be 1.5 × 1017 cm−3 with a mobility of 150 cm2/Vs. The ionization energy of the principle donor is determined to be 0.07 eV below the conduction band. The optical absorption coefficient is measured as a function of photon energy and indicates an indirect energy gap of 0.78 eV. Schottky barrier devices are formed on the material by evaporating gold as rectifying contact, and indium as an ohmic contact.