The electronic and optical properties of n‐type HgIn2Te4 crystals are investigated. Carrier concentration, mobility, and resistivity are measured over the temperature range of 90 to 300 K. The room temperature carrier concentration is determined to be 1.5 × 1017 cm−3 with a mobility of 150 cm2/Vs. The ionization energy of the principle donor is determined to be 0.07 eV below the conduction band. The optical absorption coefficient is measured as a function of photon energy and indicates an indirect energy gap of 0.78 eV. Schottky barrier devices are formed on the material by evaporating gold as rectifying contact, and indium as an ohmic contact.