A technique to fabricate isolated diamond particles with controllably embedded silicon-vacancy (Si-V) colour centres is described. Particle growth and Si doping are performed by microwave plasma-enhanced chemical vapour deposition (CVD) using silane as a source of impurity atoms. The Si-V centres have a strong narrow-band photoluminescence (PL) at room temperature. The dependence of PL intensity of the 738 nm zero-phonon line (ZPL) on silane concentration in the feed-gas mixture exhibits a pronounced maximum. A comparison of the PL and Raman spectra shows that there is an evident correlation between the ZPL intensity and the presence of structural defects and nondiamond carbon phases that act as nonradiative recombination centres suppressing radiative recombination. The results open the door for using the powerful CVD technique for large-scale production of photostable near-infrared single-photon emitters and noncytotoxic biomarkers.

Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6H-SiC substrates by a new method of solid gas phase epitaxy. During the growth characteristic voids are formed in Si at the SiC/Si interface. Raman peak position, intensity and linewidth were used to characterize the quality and the polytype structure of the SiC layers. A large enhancement in the peak intensity of the transverse optical and longitudinal optical phonon modes of SiC is observed for the Raman signal measured at the voids. In addition, scanning electron microscopy and atomic force microscopy were used to investigate the surface morphology of SiC layers.

Nanodiamonds with the 'diamond' 1332.5 cm(-1) Raman line as narrow as 1.8 cm(-1) have been produced by reactive ion etching in oxygen plasma of heteroepitaxial diamond particles grown by microwave plasma enhanced chemical vapour deposition (MWPECVD) on silicon. After the etching, a doublet is recorded in the zero-phonon line photoluminescence spectra of an ensemble of silicon-vacancy (SiV) centres at 10 K. Each line of the doublet is split into two lines corresponding to the optical transitions between the split excited and ground energy levels of the SiV centres. These Raman and photoluminescent features have been observed previously only in low-strain homoepitaxial diamond films and single-crystal diamond.

We report experiments in which high quality silica opal films are used as three-dimensional hypersonic crystals in the 10 GHz range. Controlled sintering of these structures leads to well-defined elastic bonding between the submicrometer-sized silica spheres, due to which a band structure for elastic waves is formed. The sonic crystal properties are studied by injection of a broadband elastic wave packet with a femtosecond laser. Depending on the elastic bonding strength, the band structure separates long-living surface acoustic waves with frequencies in the complete band gap from bulk waves with band frequencies that propagate into the crystal leading to a fast decay.