No abstract

No abstract

Investigation of the semiconductor detectors properties under neutron irradiation is very important for their practical application. High-resistivity gallium arsenide detectors (GaAs:Cr) were irradiated with various fast neutron fluences in range from 3.9×10n cm−2 to 3.7×1016 cm−2 at the IBR-2 reactor, FLNP, JINR. The neutron fluence was measured by placing silicon planar detectors at the measured points and measuring the 1 MeV (Si) equivalent fast neutron fluence. The charge collection efficiency and the current-voltage characteristics of irradiated detectors were measured, and their degradation after neutron irradiation was compared with the results obtained by irradiation with 21 MeV electrons.

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.