Articles you may be interested in 1.32 μ m InAs ∕ GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition J. Vac. Sci. Technol. B 24, 1922 (2006; 10.1116/1.2221316 High-efficiency 1.3 μ m InGaAs ∕ GaAs quantum-dot microcavity light-emitting diodes grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 86, 151118 (2005); 10.1063/1.1898440 Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 84, 4155 (2004); 10.1063/1.1755411 1.31μ m InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemicalvapor depositionWe have studied the influence of difference growth conditions on the two-dimensional to three-dimensional growth mode transition for a specific class of InGaAs/GaAs quantum dots ͑QDs͒ optimized for applications to optical devices operating around 1.3 m ͑In content xϷ0.5). The dots are grown by low-pressure metalorganic chemical vapor deposition on GaAs substrates. We demonstrate that the critical layer thickness corresponding to optimized single-QD layer structures ͑i.e., with reduced wetting layer thickness and high uniformity͒ can be controlled by kinetic effects. The optimized growth conditions allow us to grow six-layers stacked QD structures as active material for the fabrication of a light emitting devices operating around 1.3 m at room temperature.

. 2000. Effects of few-particle interaction on the atomiclike levels of a single strain-induced quantum dot.

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