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We present a thorough investigation of the random telegraph noise scaling trend for both NAND and NOR floating-gate Flash memories, including experimental and physics-based modeling results. The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD simulations, establishing a direct connection with cell parameters. The analysis results in a simple formula for the random telegraph noise amplitude standard deviation as a function of cell width, length, substrate doping, tunnel oxide thickness and drain bias. All the simulation results are in good agreement with experimental data and are of utmost importance to understand the random telegraph noise instability and to control it in the development of next generation Flash technologies.

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We present for the first time the direct evidence of an injection statistical spread in the number of electrons placed into the floating-gate of deeply-scaled NAND Flash memories during constant-current Fowler-Nordheim programming. The spread directly affects the precision of the programmed levels and sets the ultimate accuracy of the NAND programming algorithm. Experimental results on technology nodes ranging from 90 nm to 60 nm reveal that the injection statistical spread increases as cell dimensions are reduced and this introduces a new constraint for future NAND memories design