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The development of devices that combine a magnetic material with a semiconductor chip is a major focus of current research. Barium hexaferrite (BaFe12O19 or BaM) thick films are deposited here using a rf sputtering system. The films are amorphous and nonmagnetic after deposition. Postdeposition thermal annealings are employed to obtain magnetic properties. The effects of the substrate, thermal annealing and thickness of BaM on the magnetic properties are studied using a vibrating sample magnetometer. The initial results show good magnetic properties for the two subtrates studied and after thermal annealing above 800 °C. The magnetic properties of the thick films are close to the bulk (BaM) ones.

The development of passive devices using a ferrite is a major focus of current research for electronic applications in the microwave range (circulators and isolators). Hexagonal ferrite, such as barium ferrite (BaFe 12 O 19 or BaM), which has a large resistivity and high permeability at high frequencies are indeed of great interest for microwave device applications. In this work we developed an integrated and self-biased coplanar isolator using BaM sputtered films. BaM films, 1-36 m thick, were deposited under optimized conditions by radio frequency magnetron sputtering on alumina substrates. The films were crystallized using a 800 C thermal annealing. Isolators were then realized using patterning of coplanar waveguides (CPW) with standard lift-off technique. The slots and the central width were 300 m wide and gold was used for the conductor lines. We evaluated the influence of various parameters on the device performances: the magnetic film's thickness, the positioning of the magnetic film (CPW deposited onto the magnetic film or directly on the substrate), the CPW metallic thickness and the polarizing field. As standard design, the CPW were deposited on the top of the magnetic film. At the remanent magnetization (no polarizing field applied), the transmission coefficients then showed a non reciprocal effect, which reached 5.4 dB per cm of line length at 50 GHz for a 26.5 m thick BaM film. Both the insertion losses and the non-reciprocal effect measured increased with the magnetic film thickness with a saturation effect. In the second design where the CPW is deposited directly on the substrate after a selective etching of the BaM film, we measured that the non reciprocal effect reached higher values for lower BaM thicknesses than for the first design and that the insertion losses also decreased. The interaction between the field lines created by the conductors and the magnetic film was indeed favored in the second case. Finally, we show the tunability of the isolator with the polarizing field.

3D stacking technologies are electrically studied to predict high speed data transmission for memory on logic applications. Maximal frequency of bandwidth for memoryprocessor and processor-BGA channels are extracted and compared for Face to Face and Face to Back 3D stacking and between an interposer technology. Using expected electrical specifications of Wide IO applications in terms of data rates, a roadmap is proposed in accordance to the integration density, carried out by the TSV density.