Abstract-We describe a new RF and microwave power sensor MMIC design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for inbuilt detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale.

The problem of low-noise reception of high-frequency narrow-band modulated optical radiation is discussed. Two topologies for the receiver are proposed, and the operation of each is described. Design characteristics are presented for S band receivers constructed using low capacitance photodetectors, and GaAs MESFET's. The performance of two experimental receivers was measured and found to be in reasonable agreement with design projections. Potential techniques for design optimization and extensions to other types of receiver front ends are considered.

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