We investigated the negative photoconductivity (NPC) effect that was observed in a p-type Pb1-xSnxTe film for temperatures varying from 300 K down to 85 K. We found that this effect is a consequence of defect states located in the bandgap which act as trapping levels, changing the relation between generation and recombination rates. Theoretical calculations predict contributions to the NPC from both conduction and valence bands, which are in accordance with the experimental observations.
The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy Δso. The values of Δso are linearly dependent on the Fermi wave vector (kF) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.
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