Cubic‐ and wafer‐shaped GaAs p‐i‐n diodes fabricated with ion‐implanted p/n contact layers have been operated as optically activated opening switches with high‐power output performances. © 1993 John Wiley & sons, Inc.

We present a hybrid implant-epitaxy process that alleviates the inherent depth-width-dependent limitation of ion implantation. This technique allows shallow implants, which produce a thin active N layer with a controlled doping gradient, to be buried at an arbitrary depth below the less-critical, epitaxiallygrown surface layer. The formation and characteristics of GaAs buriedshallow-implant (BSI) layers for microwave power FETs will be discussed.