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We propose a novel variable inductor on a Si complementary metal oxide semiconductor (CMOS) chip, whose inductance is of nH-order, for GHz applications. The inductance value can be varied by moving a metal plate above the inductor. The magnetic flux penetrating the spiral inductor continuously varies depending on the position of the metal plate. The metal plate is slid horizontally using a micro electro mechanical system (MEMS) actuator. We present the measured and simulated results. At 2.45 GHz, the inductance is varied from 6.6 nH to 5.7 nH, i.e., the variable range is 13%. These results show that the effect of parasitic capacitance between the spiral inductor and the metal plate can be ignored. The proposed variable inductor can be applied to RF circuits.

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This paper investigates the twisted differential transmission line structure to achieve high-speed signal transmission and electromagnetic interference (EMI) noise reduction of global interconnects in Si LSIs. The differential transmission line in Si LSIs can transmit a 12 Gbps pulse signal and has the capability of reducing EMI noise. The proposed twisted-diagonal-pair line provides high-speed, low-EMI-noise, high-crosstalk-robustness and high-density global interconnects in Si LSIs.