The band-gap energy (Eg) of metalorganic vapor phase epitaxially (MOVPE) grown Ga0.5In0.5P lattice matched to (001) GaAs is presented as a function of a wide range of V/III ratios and growth temperatures. Photoluminescence, Raman scattering spectroscopy, transmission electron microscopy, and impurity diffusion were used to investigate this functional relationship. Two pieces of evidence are shown which demonstrate that MOVPE Ga0.5In0.5P epitaxial layers with ‘‘abnormal’’ Eg∼1.85 eV and ‘‘normal’’ Eg∼1.9 eV correspond to an ordered and a random (Ga,In) distribution on column III sublattices, respectively. In an ordered state, a sequence of (110) planes...GaGaInInGaGaInIn...in the [110] direction is the most probable distribution.
In the paper Phys. Plasmas 18, 092705 (2011), dynamic stabilization mechanism for the Rayleigh-Taylor instability was discussed together with another dynamic migration mechanism, which we proposed and is discussed further in a more general way in this paper. In general, a perturbation of physical quantity would feature the instability onset. Normally, the perturbation phase is unknown, so that the instability growth is discussed with the growth rate. However, if the perturbation phase is known, the instability growth can be controlled by a superposition of perturbations; the most well-known mechanism is a feedback control to compensate the displacement or the distortion of physical quantity. If the perturbation is induced by, for example, a particle beam axis oscillation or wobbling, the perturbation phase could be controlled, and the instability growth is mitigated by the superposition of the growing perturbations.
In this review paper on heavy ion inertial fusion (HIF), the state-of-the-art scientific results are presented and discussed on the HIF physics, including physics of the heavy ion beam (HIB) transport in a fusion reactor, the HIBs-ion illumination on a direct-drive fuel target, the fuel target physics, the uniformity of the HIF target implosion, the smoothing mechanisms of the target implosion nonuniformity and the robust target implosion. The HIB has remarkable preferable features to release the fusion energy in inertial fusion: in particle accelerators HIBs are generated with a high driver efficiency of ~ 30-40%, and the HIB ions deposit their energy inside of materials. Therefore, a requirement for the fusion target energy gain is relatively low, that would be ~50-70 to operate a HIF fusion reactor with the standard energy output of 1GW of electricity. The HIF reactor operation frequency would be ~10~15 Hz or so. Several-MJ HIBs illuminate a fusion fuel target, and the fuel target is imploded to about a thousand times of the solid density. Then the DT fuel is ignited and burned. The HIB ion deposition range is defined by the HIB ions stopping length, which would be ~1 mm or so depending on the material. Therefore, a relatively large density-scale length appears in the fuel target material. One of the critical issues in inertial fusion would be a spherically uniform target compression, which would be degraded by a non-uniform implosion. The implosion non-uniformity would be introduced by the Rayleigh-Taylor (R-T) instability, and the large density-gradient-scale length helps to reduce the R-T growth rate. On the other hand, the large scale length of the HIB ions stopping range suggests that the temperature at the energy deposition layer in a HIF target does not reach a very-high temperature: normally the about 300eV or so is realized in the energy absorption region, and that a direct-drive target would be appropriate in HIF. In addition, the HIB accelerators are operated repetitively and stably. The precise control of the HIB axis manipulation is also realized in the HIF accelerator, and the HIB wobbling motion may give another tool to smooth the HIB illumination non-uniformity. The key issues in HIF physics are also discussed and presented in the paper.
The previously reported photoluminescence(PL)-peak-energy anomaly problem for Ga0.5In0.5P grown on GaAs by metalorganic vapor phase epitaxy (MOVPE) was studied in detail. X-ray microprobe analysis, and optical transmission spectra measurements were carried out to examine alloy compositions and band-gap energies (E gs), respectively. The MOVPE growth condition dependence of {1/2, 1/2, 1/2} superlattices (SLs) on the cation sublattice in Ga0.5In0.5P was studied in detail, using transmission electron microscopy. The correlation between the E g anomaly and the SLs was examined in detail and established. Raman spectra seemed to show zone-folding effects due to the monolayer SL. A similar E g anomaly was reported for AlGaInP. AlGaInP and AlInP were also found to show the same SLs.
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