We have studied the atomic structure of the surface and interface of VO X /TiO 2 (110) by X-ray photoelectron diffraction (XPED). The TiO 2 (110) crystal surface was cleaned by cycles of Ar + sputtering followed by annealing. The TiO 2 (110) crystal surface was deoxidized by annealing. Therefore, TiO 2 (110) crystal surface was annealed in oxygen atmosphere. Vanadium oxides were deposited by two processes. In process A, vanadium was first deposited on the TiO 2 crystal and then oxidized in an O 2 atmosphere. In process B, vanadium was deposited in an atmosphere of low-pressure O 2 . We characterized the VO X ultrathin film grown on the TiO 2 (110) surface by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), and XPED. Finally the surface and interface structures of the VO X /TiO 2 (110) were clarified by using the multiple scattering cluster model with spherical wave (MSC-SW) method and a reliability factor R(R factor).

It took several hours to obtain one X-ray photoelectron diffraction (XPED) pattern because XPED measurement requires repeated acquisition of XPS as a function of emission angle. The measurement time using our previous XPED system was too long to clarify the dynamics of epitaxial growth and catalytic reaction. In the present study, in order to minimize the measurement time, we improved the software used to control the XPED system. Then, by using the improved system, we obtained information on the structural changes during the heating process of an ion-bombarded silicon surface.

We have studied the atomic structure of the surface and interface of VO2/TiO2(110) model catalyst by X-ray photoelectron diffraction (XPED). In this study, vanadium was deposited on the TiO2(110) surface in the oxygen atmosphere. We characterized the VO2 ultra-thin film grown on the TiO2(110) surface by low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), and XPED. As a result, VO2 ultra-thin film grown epitaxially on TiO2(110) was determined by using the multiple scattering cluster model with spherical wave (MSC-SW). Finally, we carried out the quantitative analysis by using the reliability factor R (R-factor) method and clarified the surface and interface structures of VO2/TiO2(110).