A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments.

We have investigated the structural properties of Bragg reflectors grown by molecular beam epitaxy. The reflectors consist of quarter-wavelength stacks of AlAs/ AlxGa1−xAs. We find a strong dependence of the interface quality on the substrate growth temperature, the Al composition in the ternary alloy, and the presence of impurities in AlAs. We have classified the interface disorder into two categories: interface roughness and structural waviness. We ascribe interface roughness to the segregation of oxygen during AlAs growth. The structural waviness originates from differing surface migration kinetics of Al and Ga which results in phase separation during growth of AlGaAs.

Articles you may be interested inComplete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic As H 3 interruption Appl. Phys. Lett. 90, 033105 (2007); 10.1063/1.2432285 Charged exciton emission at 1.3 μ m from single InAs quantum dots grown by metalorganic chemical vapor deposition Appl. Photopumped red-emitting InP/In 0.5 Al 0.3 Ga 0.2 P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 78, 4091 (2001); 10.1063/1.1382622 Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

We report the first observation of electron resonant tunneling through parabolic quantum wells, compositionally graded by means of short-period (15 Å) AlxGa1−xAs/GaAs superlattices grown by molecular beam epitaxy. In one structure, comprising a 300-Å-wide well compositionally graded from AlAs to GaAs, five equally spaced resonances are observed in the current-voltage (I-V) characteristic in good agreement with the theory. In another structure with 432-Å-wide wells graded from Al0.30Ga0.70As to GaAs, up to 16 resonances are observed in the I-V. The first ten correspond to resonant tunneling through the quasi-bound states of the double barrier while the others are ascribed to electron interference effects associated with virtual levels in the quasi-continuum energy range above the collector barrier.

We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3 μm. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution.