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The stress of thin (100 nm) gold films grown by electron-beam deposition onto cover-glass substrates was measured dynamically during heating and cooling cycles between room temperature and 500 °C. The initial tensile stress, 82 MPa of the as-deposited films increased slowly with temperature up to about 300 MPa at 375 °C, and then decreased to 120 MPa on further heating to 500 °C. When the film was cooled from 500 °C back to room temperature, the final film stress became compressive (−50 MPa). A transmission electron microscope study has shown that when the temperature is raised above ∼370 °C, which is the eutectic temperature of the gold–silicon binary alloy, an interfacial reaction started between the gold film and the glass substrate. This interfacial reaction can account for the stress relaxation occurring at the high temperatures.

The Schottky barrier height and Auger studies of yttrium and yttrium silicide on silicon

Laser Raman radar offers a promising approach to the remote sensing of atmospheric pollutants in stack plume. An analysis revealed that the combination of the second harmonic of a Nd :YAG laser, a synchronous single photoelectron counting (SSPC) scheme, and narrow passband interference filter employed for light source, signal processor, and separation of Raman-scattered light respectively gave the most sensitive system for stack effluent monitoring. Using a laser Raman radar constructed on the basis of the analysis, the concentration of SO~ in the plume emitted from a 150 m high stack of a power plant was measured at a distance of 228 m.