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The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed.

Abstract-We propose a method of correlating circuit performance with technology fluctuations during the circuit-design phase. The method employs test circuits sensitive for technology fluctuations and a circuit simulation model which enables to interpret the correlation. We validate our proposal with a cascode-current-source test circuit and the driftdiffusion MOSFET model HiSIM. The chosen test circuit allows to separate intra-chip and inter-chip technology fluctuations and to correlate these fluctuations with circuit-performance fluctuations. One important result is that intra-chip fluctuations increase faster than inter-chip fluctuations with decreasing gate length. Quantitative modeling with HiSIM reveals random fluctuation of the effective gate length as the most likely origin for these findings.