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An improved method for extracting the vertical channel-impurity profile [Nsub(x)] of metal–oxide–semiconductor field-effect transistors (MOSFETs) from measured threshold–voltage dependence on bulk–source voltage is proposed. Previous restriction to slowly varying Nsub(x) is overcome by approximating Nsub(x) as a simple analytic function. Application to advanced MOSFETs with steep pileup or retrograded channel profiles and channel length down to 100 nm becomes possible. Extracted analytic profiles are additionally useful for modeling of Nsub(x)-dependent MOSFET phenomena, e.g., the reverse-short-channel effect.

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The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed.