Physical modeling of the reverse-short-channel effect for circuit simulation

Miura-Mattausch, Mitiko; Suetake, M.; Mattausch, Hans Jürgen; Kumashiro, S.; Sato, Naoyuki; Odanaka, S.; Nakayama, Noriaki

doi:10.1109/16.954493

Cited by 26 publications

(8 citation statements)

References 15 publications

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“…The V th dependence on the bulk voltage (V bs ) gives important information about the condition beneath the gate oxide. [11][12][13] We exploit the feature for extracting the device parameters. However, the V th description for the SOI-MOSFET is not single but differs for different V bs values applied.…”

Section: For the Task (2)mentioning

confidence: 99%

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Kitamaru¹,

Uetsuji²,

Sadachika³

et al. 2004

Jpn. J. Appl. Phys.

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The circuit simulation model Hiroshima-university STARC IGFET Model silicon-on-insulator (HiSIM-SOI) for the fully depleted SOI metal-oxide-semiconductor field-effect-transistor (MOSFET) is developed based on the surafce-potential description. To include all device features of the SOI-MOSFET explicitly, the surface potential values not only at the SOI surface but also the back side, as well as the bulk back-gate are solved iteratively. The total iteration for the potential calculation requires only about twice as much calculation time as the bulk-MOSFET case, solving ony at the surface. The model reproduces measured I-V characteristics within numerical accuracy, and is proved stable circuit convergence.

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Section: For the Task (2)mentioning

confidence: 99%

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Kitamaru¹,

Uetsuji²,

Sadachika³

et al. 2004

Jpn. J. Appl. Phys.

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“…Nevertheless, the dopant pile-up at the source and drain ends of the channel due to halo implantation results in increased effective doping concentration as the gate length decreases. In the literature, lateral non-uniformly doped channel is handled empirically with linear approximation [62], step function [2], and Gaussian profile [63]. It can be used to model the reverse shortchannel effect (RSCE).…”

Section: Quantum-mechanical Correctionmentioning

confidence: 99%

Scalable compact modeling for nanometer CMOS technology

See¹

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This thesis documents the compact model developed for bulk MOSFET and doublegate MOSFET. The unified regional modeling approach is used in the physics-based scalable model development for bulk and double-gate MOSFETs. Surface potential models are developed regionally in accumulation, weak accumulation, depletion, volume and strong inversion regions, which are subsequently combined using interpolation functions to ensure smooth higher order derivatives. New unified regional-based short-channel effects are developed to improve the physical scalability of the charge model. A new concept that defines two separate saturation voltages at source and drain, referenced to bulk (or ground for double-gate), respectively, is introduced to meet the Gummel symmetry requirement and to allow possible extension to asymmetric source/drain devices within the same core model. A novel approach to unifying compact models for different non-classical MOS structures, such as ultra-thin body SOI and symmetric/asymmetric double-gate MOSFETs, is proposed. Explicit surface and zero-field potentials for common-gate asymmetric double-gate MOSFETs are solved regionally and the unified solutions are applied in the explicit drain-current model for double-gate MOSFETs. Explicit surface potentials for double-gate MOSFET with quantum mechanical correction are also developed. The research demonstrates a closer step towards the unification of MOS models for future generation non-classical MOS devices.

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“…62, it can be seen that I su b/Id is reduced initially before it finally increased. This can be correlated to the degradation of Ioiin as follows: As more electrons are trapped near the drain region for the shorter stress time, this will correspond to an increase of the effective |V GS |, therefore reducing the lateral electric field in the channel which subsequently reduces I su b/Id-For longer stress time, I su t,/Id increases, therefore suggesting that both positive trap charges and donor type interface-trap charges dominates eventually.…”

mentioning

confidence: 90%

“…62 Plot of AI DL IN against stress time for HE injection condition for 1000 s. At short stress time, electron trappings can be observed which led to an increase of I DLIN . At longer stress time, I DLtN decreased.…”

mentioning

confidence: 98%

Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology

See¹

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Physical modeling of the reverse-short-channel effect for circuit simulation

Cited by 26 publications

References 15 publications

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Scalable compact modeling for nanometer CMOS technology

Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology

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