1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)
DOI: 10.1109/sispad.1999.799297
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Precise physical modeling of the reverse-short-channel effect for circuit simulation

M. Suetake
1
,
Mitiko Miura-Mattausch2,
Hans Jürgen Mattausch3
et al.
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Cited by 4 publications
(1 citation statement)
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“…It was demonstrated that the extraction can be done with measured Gh-Vbs characteristics as shown in Fig. 9 [29]. Fig.…”
Section: B Robustness For Advanced Technologiesmentioning
confidence: 91%

Circuit simulation models for coming MOSFET generations

Miura-Mattausch
1
,
Ooshiro2,
Suetake3
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
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“…It was demonstrated that the extraction can be done with measured Gh-Vbs characteristics as shown in Fig. 9 [29]. Fig.…”
Section: B Robustness For Advanced Technologiesmentioning
confidence: 91%

Circuit simulation models for coming MOSFET generations

Miura-Mattausch
1
,
Ooshiro2,
Suetake3
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
Self Cite
1
0
0
0
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MOSFET modeling gets physical

Miura-Mattausch
1
,
Mattausch
2
,
Arora
3
et al. 2001
IEEE Circuits Devices Mag.
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Physical modeling of the reverse-short-channel effect for circuit simulation

Miura-Mattausch
1
,
Suetake
2
,
Mattausch
3
et al. 2001
IEEE Trans. Electron Devices
26
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8
0
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