We study the implant-induced hydrogenated defects responsible for the Smart Cut™ layer transfer of Si ͑001͒ films. Different experimental methods are used to quantify the time dependence of the defect evolution and interactions during isothermal annealings. An optical characterization technique was developed for the statistical analysis of the formation and growth of micrometer size microcracks in the buried implanted layer. We show that the formation of molecular hydrogen is dominated by a transient phenomenon related to the rapid dissociation of the hydrogenated point defects. The impact of the H 2 formation kinetics on the microcrack evolution is described and the physical mechanisms involved in their growth are identified. A comprehensive picture of the fracture phenomenon in H implanted Si leading to the full layer transfer is proposed and discussed.

First results on formation of thin film GeOI structures by the Smart Cut T M technology are presented in this paper. Thin single crystal layers of Ge have been successfully transferred, via oxide bonding layer, onto standard Si substrates with diameters ranging from 100 to 200 mm. Compared to SOI manufacturing, the development of GeOI requires adaptation to the available germanium material, since the starting material can be either bulk Ge or an epitaxial layer. Some results will be presented for GeOI formation according to the different technological options. Germanium splitting kinetics will be discussed and compared to already published results. To show good quality of the GeOI structures, detailed characterization has been done by TEM cross sections for defect densities, interfaces abruptness and layers homogeneities evaluation. AFM was used for surface roughness measurements. These results help define procedures that are required to achieve large diameter high quality GeOI structures.

Abstract. Hydrogen implantation in silicon and subsequent thermal anneal result in the formation of a wide range of point and extended defects. In particular, characteristic two-dimensional extended defects, i.e. platelets, are formed. The growth of these defects during thermal anneal, related to H migration, induces the development of micro-cracks in Si. In this paper, a time dependence study of H defects during isothermal anneals is performed using SIMS, FTIR and TEM techniques. We calculate the kinetics of H 2 formation based on SIMS depth profiling and FTIR measurements. We show that the splitting is determined by H migration and rearrangement of hydrogenated defects.

4 p.International audienceThe effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, ≤ 450 °C, isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced, as compared to the literature values, diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime