Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals

Personnic, S.; Tauzin, A.; Bourdelle, K.K.; Letertre, F.; Kernevez, N.; Laugier, F.; Cherkashin, Nikolay; Claverie, A.; Fortunier, Roland

doi:10.1063/1.2401463

Cited by 5 publications

(6 citation statements)

References 6 publications

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“…These are classical features observed when the precipitation of a second phase from a supersaturated matrix occurs since the precipitates tend to absorb the free mobile species around them. Second, in agreement with our previous report, 6 we note an apparent H "dose loss": reduction in the integrated area under the profile after annealing. That is not consistent with the small redistribution of H in the surface region and might be due to H precipitation in a form that is not or only partially detected by SIMS.…”

Section: Methodssupporting

confidence: 92%

“…Using the SIMS technique we have shown previously 6 that the kinetics of H 2 formation in HEDs is close to that for the layer transfer. It has been suggested by Freund 22 that the growth of an individual microcrack is driven by the pressure of the hydrogen gas.…”

Section: Driving Force Behind Microcrack Growthmentioning

confidence: 62%

“…In a previous study 6 we measured the time needed to obtain the full layer transfer at a given temperature: the splitting time t s ͑T͒. The data showed an Arrhenius-type dependence with an activation energy E a = 2.3Ϯ 0.1 eV.…”

Section: Methodsmentioning

confidence: 99%

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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Personnic

Bourdelle

Letertre

et al. 2008

Journal of Applied Physics

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We study the implant-induced hydrogenated defects responsible for the Smart Cut™ layer transfer of Si ͑001͒ films. Different experimental methods are used to quantify the time dependence of the defect evolution and interactions during isothermal annealings. An optical characterization technique was developed for the statistical analysis of the formation and growth of micrometer size microcracks in the buried implanted layer. We show that the formation of molecular hydrogen is dominated by a transient phenomenon related to the rapid dissociation of the hydrogenated point defects. The impact of the H 2 formation kinetics on the microcrack evolution is described and the physical mechanisms involved in their growth are identified. A comprehensive picture of the fracture phenomenon in H implanted Si leading to the full layer transfer is proposed and discussed.

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Section: Methodssupporting

confidence: 92%

Section: Driving Force Behind Microcrack Growthmentioning

confidence: 62%

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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Personnic

Bourdelle

Letertre

et al. 2008

Journal of Applied Physics

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“…The oxygen concentration in the wafers was around 24 ppm or 1.2ϫ 10 18 at/ cm 3 , and carbon concentration was in the range of 0.5-1 ppm or ͑2 −5͒ ϫ 10 16 at/ cm 3 . 12 The O detection limit for SIMS measurements was around 7 ϫ 10 18 at/ cm 3 . After the implantation, the wafers were bonded to base substrates in order to prevent formation of blisters at the implanted surface during subsequent anneals.…”

Section: Methodsmentioning

confidence: 98%

“…12 12 After debonding and stripping the oxide we used SIMS technique to obtain the depth distribution of implanted H and impurities. The oxygen concentration in the wafers was around 24 ppm or 1.2ϫ 10 18 at/ cm 3 , and carbon concentration was in the range of 0.5-1 ppm or ͑2 −5͒ ϫ 10 16 at/ cm 3 .…”

Section: Methodsmentioning

confidence: 99%

Low temperature diffusion of impurities in hydrogen implanted silicon

Personnic

Bourdelle

Letertre

et al. 2007

Journal of Applied Physics

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4 p.International audienceThe effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, ≤ 450 °C, isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced, as compared to the literature values, diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime

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Hydrogen blistering of silicon: Progress in fundamental understanding

Terreault

2007

Physica Status Solidi (a)

119

107

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When silicon is implanted with a sufficient concentration of H ions, at low to moderate temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled blisters and/or craters of exploded blisters appear on the surface. Under particular conditions, blistering can be produced by plasma hydrogenation as well. The phenomenon is another facet of hydrogen behaviour in silicon, a question with both fundamental and applied implications. Blistering is at the origin of the “ion‐cutting” process for the fabrication of silicon‐on‐insulator and other heterostructures; this process is particularly useful whenever atomically sharp interfaces between layers are required. The novelty and vast potential of this process has spurred since the mid‐1990's a burst of experimental activity on blistering. The purposes of those works were either to improve or extend the ion‐cut process, or to clarify its underlying mechanisms. In “mechanisms”, the plural is used to convey the fact that it is a multi‐step phenomenon. Because of this complexity, the theoretical work, in comparison, is far less abundant. Hydrogen blistering of silicon is qualitatively understood in broad terms: H being insoluble in Si, it tends to segregate into cavities which grow and coalesce at high temperature, and the H2 pressure in the cavities finally deforms the surface. In fact, our understanding of the microscopic mechanisms has progressed much beyond that level thanks to the sophisticated work that has been carried out using techniques such as transmission electron microscopy, Rutherford backscattering in the channelling mode, infrared spectroscopy of local vibrational modes, stress and strain measurements, and others. The effects of n‐ or p‐doping, He ion coimplantation, and isotope substitution have also greatly helped in discriminating between different hypotheses. After a review of the most relevant experimental facts, the blistering mechanisms that have been proposed in the literature will be discussed and their conformity with the data assessed. Finally an attempt will be made to identify the key questions and suggest a few avenues for future work. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals

Cited by 5 publications

References 6 publications

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Low temperature diffusion of impurities in hydrogen implanted silicon

Hydrogen blistering of silicon: Progress in fundamental understanding

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