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Nowadays, low powerhigh speed CMOS design is one among the challenging issues. As the technology is scaling down, the static power consumption has turned into a remarkableconcern. The proposed methodology incorporates the following technique such as sleep technique, stack technique, sleepy stack technique, sleepy keeper technique, leakage control transistor technique (LECTOR) and sleepy keeper leakage control transistor technique (SK-LCT) for leakage power reduction. The proposed power gating techniquelead to low power,high speed CMOS design. The xor gate, xnor gate, half adder & 6T sram cell is outlined using newly proposed power gating technique for a low power high speed design.When compared to the conventional methodology xor gate saves 19.95 % of power & 33.75% of delay, xnor gate saves 12 % of power & 23.29 % of delay, half adder saves 35.29% of power &25.69% of delay and sram cell saves 14.29% of power & 34.37 % of delay. Simulation is done using Tanner EDA tool and the outcomes demonstrate a noteworthy change in leakage power utilization and speed.