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Thin HfO2 films were deposited on polished microscope glass substrates by DC magnetron sputtering at bias voltages of -85 V, -100 V, -115 V, -130 V and -145 V. The deposited films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR spectrophotometry. The XRD results show the presence of a polycrystalline monoclinic phase. The roughness calculated from the AFM images increases as the bias voltage is raised to -130 V and then starts decreasing. The effect was also investigated of the bias voltage on the optical properties of the HfO2 films.