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Micron-sized particles of gallium nitride were synthesized at temperatures as low as 300 °C under ammonia in anhydrous conditions. Two different syntheses were investigated: compound 1 was synthesized using a physical mixture of gallium and lithium under flowing ammonia; compound 2 was synthesized using a gallium/lithium alloy under flowing ammonia. These two methods relied on the presence of lithium metal acting as a nitrogen-fixing and transport agent for metallic gallium. Powder X-ray diffraction demonstrated the purity and crystalline nature of the resulting white gallium nitride; it was found to exhibit extraordinary crystallinity considering its formation conditions. Elemental analysis also determined the purity of 1 and 2 and showed an absence of the lithium impurity in the former, as contrasted with 0.23% Li in the latter. SEM demonstrated the particle sizes of 1 and 2 to be on the micron scale.

Results from indentation load relaxation (ILR) tests on thin film-substrate systems are reported.In the case of a 1 pum aluminum film on silicon, the data can be interpreted as reflecting both the properties of the film and the interface between film and substrate.Data from a 3 Um TiN film on 304 SS are believed to reflect the combined behavior of the film and substrate.

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