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The expert system described here for monitoring VLSI and ULSI integrated circuit process parameters is based on the concepts of the chargecapacitance or Q-C method. The process parameters determined are: ( 1 ) oxide leakage current, ( 2 ) impedance to establish electrical contact quality, (3) oxide layer thickness, ( 4 ) semiconductor doping profile, ( 5 ) oxide fixed charge density, ( 6 ) interface trap density, ( 7 ) semiconductor band bending, and (8) threshold voltage of a MOSFET.