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The features of growth epitaxial films PbSe1Te (x = 0,2) on substrates BaF2 by the epitaxy of molecular beam method are investigated. The optimum meanings of speed of condensation are certain and the temperatures of a substrate at which turn out of a film with perfect structure. The complex research of features of growth films in corellation with their physical properties is carried out. The structure films was supervised electronographic, X-ray diffractometric and electron-microscope by methods. It is established, that epitaxial films PbSe1Te on BaF2 (1 1 1) substrates grow by plane (1 1 1). It revealed, that epitaxial films brought up at temperatures of substrate 673K have monocrystal structure with half-width X-ray diffraction swing wi!2 = 80÷100" and smooth surface without secondary inclusions.

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