Spectra-MNC and Spectra-Auto showed distinct features that should be considered on a case-by-case basis. Similar investigations should be undertaken as new collection platforms are introduced.
Although the conditions of this study showed no favorable or unfavorable effects of three different filters on microparticle formation, surveillance and investigation of unanticipated outcomes in other experimental and clinical circumstances should continue.
To investigate whether biotinidase deficiency may occur in liver disease, we determined biotinidase activity, biotin levels, and organic acids in patients with liver disease. Serum biotinidase activity in patients with liver disease (2.63 +/- 1.40 nmol/min/ml) was significantly lower than in the control group (5.43 +/- 1.06 nmol/min/ml). Serum biotinidase activity in decompensated liver cirrhosis (LC) and hepatoma was significantly lower than in acute viral hepatitis (AVH), chronic viral hepatitis (CVH), and compensated LC. The mean serum level of biotin in decompensated LC (1.8 +/- 0.6 microgram/ml) and hepatoma (1.7 +/- 0.8 microgram/ml) was significantly lower than in the control group (2.5 +/- 1.0 microgram/ml), and urinary excretion of biotin was increased in patients with liver disease, particularly in decompensated LC. Biotinidase activity correlated positively with serum biotin level and correlated negatively with urinary biotin level. Moreover, in four of five patients with severe liver disease the excretion of propionate, lactate, and 3-hydroxybutyrate decreased after biotin supplementation. The data for patients with severe liver disease so resembled those for late-onset multiple carboxylase deficiency that biotinidase deficiency is likely in patients with severe liver disease.
We studied a novel method of increasing the efficiency of solar cells using BaSi2 as a semiconductor. BaSi2 could be deposited by RF magnetron sputtering using a polycrystalline BaSi2 target, followed by annealing at 500 °C for 30 min in N2 ambient. Furthermore, Schottky-type solar cells using BaSi2 were fabricated. The crucial point is that Al–Nd was used to form the Schottky junction between the BaSi2 film and the Al–Nd electrode. Additionally, Si3N4 (3–5 nm) was used as an oxidation prevention layer. Under irradiation at 90 K, resulting in a short-circuit current density (Jsc) of 3.19 mA/cm2, an open-circuit voltage (Voc) of 0.76 V, and a fill factor (FF) of 0.28 were obtained.
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