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Tin-doped indium oxide (ITO) films with the resistivity less than 1.35×10−4 Ω cm were formed by low voltage dc magnetron sputtering (LVMS) and highly dense plasma-assisted electron beam (EB) evaporation using the arc plasma generator (HDPE). The structural properties of these films were investigated using x-ray diffraction, scanning electron microscope, and electron spectroscopy for chemical analysis, in comparison with the films formed by conventional magnetron sputtering and EB evaporation, in order to clarify the key factors for low resistivity. With decreasing plasma impedance and sputtering voltages from 540 to 380 V, the resistivity of the films deposited at Ts=400 °C decreased from 1.92 to 1.34×10−4 Ω cm, due mostly to increase in the carrier density. This LVMS film showed higher crystallinity because of lower damages of high-energy particles during the deposition, which might increase the number of electrically active species. For HDPE, the film with resistance of 1.23×10−4 Ω cm was deposited at Ts=280 °C, which showed more flat surface morphology and less surface segregation of tin than the conventional EB films.

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Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achieved for the first time by using single crystalline yttria stabilized zirconia (YSZ) as substrates. The epitaxial relationship between ITO film and YSZ substrate was ITO[100]∥YSZ[100]. By comparing the electrical properties of this epitaxial ITO film with that of a randomly oriented polycrystalline ITO film grown on a glass substrate, neither the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in ITO films.