Origin of characteristic grain-subgrain structure of tin-doped indium oxide films

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

“…3). Concerning the surface roughness of the films, increase in the surface roughness was reported as the oxygen partial pressure increased due to the increase in the resputtering effect [18,24]. This was not in agreement with our results also.…”

“…It was also suggested that changes in the preferential orientation of ITO films could be due to other reasons, such as the variation in energy of the sputtered atoms [16] and the concentration of Sn in the ITO film [17]. Kamei et al [18] reported that the different re-sputtering rates between the (400) and (222) planes of ITO film during film growth could have affected crystalline orientation. The preferential orientation and resultant surface morphology of ITO thin films, however, has not been fully understood yet.…”

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

“…Similarly, an increase in scattering of the sputter yield at higher pressures also results in a reduction of the deposition rate. XRD analysis of these coatings could offer further evidence to support this argument since Kamei et al [18] found that re-sputtering of the (440) plane orientation occurs preferentially over that of the (222) and (400) planes.…”

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

“…From these experiments, it was found that for high surface mobility conditions (heating the sample), a (400) texture develops. The usual explanation of resputtering [29] seems unlikely, since any increase in plasma density results in an increase in the target current for the remote plasma system. As the films were deposited at constant target power, the bias on the target is reduced to compensate for the increased current, resulting in a higher flux of lower energy ions.…”