Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Kim, Jae-Hyung; Lee, Joon‐Hyung; Heo, Young‐Woo; Kim, Jeong-Joo; Park, Ju-O

doi:10.1007/s10832-007-9351-8

Cited by 53 publications

(18 citation statements)

References 30 publications

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“…This phenomenon is owing to the fact that there is a very small amount of oxygen left after the deposition of granular films. Jae-Hyung Kim [17] has verified that Oxygen addition is not conducive to the (400) preferred growth of ITO thin films. However, it is seen from the XRD patterns that the ITO thin films deposited at 150 W, 200 W, and 250 W have a sharp (400) diffraction peak.…”

Section: Resultsmentioning

confidence: 99%

“…K. Aijo John [10] has pointed out that the ITO thin films with (400) preferred orientation exhibit outstanding performance in conducting behavior. Kim [17] has also shown the ITO thin films with (400) preferred orientation have higher carrier concentrations than the ITO thin films with (222) preferred orientation. It was also reported that the transmittance of ITO thin film is closely related to its crystallinity [18].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Dong

Zhu

et al. 2019

Materials

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Nanopillar crystalline indium tin oxide (ITO) thin films were deposited on soda-lime glass substrates by radio frequency (RF) magnetron sputtering under the power levels of 100 W, 150 W, 200 W and 250 W. The preparation process of thin films is divided into two steps, firstly, sputtering a very thin and granular crystalline film at the bottom, and then sputtering a nanopillar crystalline film above the bottom film. The structure, morphology, optical and electrical properties of the nanopillar crystalline ITO thin films were investigated. From X-ray diffraction (XRD) analysis, the nanopillar crystalline thin films shows (400) preferred orientation. Due to the effect of the bottom granular grains, the crystallinity of the nanopillar crystals on the upper layer was greatly improved. The nanopillar crystalline ITO thin films exhibited excellent electrical properties, enhanced visible light transmittance and a highly infrared reflectivity in the mid-infrared region. It is noted that the thin film deposited at 200 W showed the best combination of optical and electrical performance, with resistivity of 1.44 × 10−4 Ω cm, average transmittance of 88.49% (with a film thickness of 1031 nm) and IR reflectivity reaching 89.18%.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Dong

Zhu

et al. 2019

Materials

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“…A reorientation due to oxygen has been seen in systems such as ITO and silver (I) oxide (Ag 2 O). 26,27 The respective diffraction patterns are shown in Fig. 13.…”

Section: E Deposition Parameter Dependencementioning

confidence: 99%

Heteroepitaxy and crystallographic orientation transition in La_1.875Sr_0.125NiO₄thin films on single crystal SrTiO₃

2013

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We investigate the orientation transition and strain relaxation in oxygenated epitaxial strontiumdoped lanthanum nickelate, La 1.875 Sr 0.125 NiO 41d (LSNO) thin films grown on single crystal strontium titanate, SrTiO 3 (STO) substrates. Structural evolution has been studied as a function of film thickness by x-ray diffraction, pole figure analysis, and transmission electron microscopy (TEM). The LSNO layer grows epitaxial (OR1) with respect to the STO substrate with an orientation (001) OR1 //(001) STO and ,001. OR1 //,001. STO. This orientation is maintained up to approximately 15 nm as observed from TEM, at which point it undergoes reorientation and lattice mismatch strain relaxation. The growth continues with a new orientation (OR2) as (100) OR2 //(001) OR1 and with ,100. OR2 //,001. OR1 and ,001. OR2 //,001. OR1 with respect to the epitaxial LSNO layer. We consider possible mechanisms in detail leading to these phenomena given that the potassium nickel fluoride (K 2 NiF 4 )-structured lattice is able to accommodate excess oxygen interstitials and corresponding changes in the Ni valence state. By investigating the phase space of deposition parameters, we experimentally identify key factors leading to the reorientation phenomena.

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“…The gradual decrease in thickness with increase of the oxygen partial pressure can be explained by the smaller sputtering yields of oxygen ions than argon ions; the momentum transfer of oxygen is smaller than that of argon during ionic bombardment [20]. However, the thickness difference between the films that are grown with and without oxygen is too significant to be explained only by the momentum transfer process [21]. In addition, according to XRD analysis (Figure 4), increasing the oxygen partial pressure was found to degrade the crystallinity of the zinc titanites thin films due the formation of oxygen-induced defects [22,23].…”

Section: The Effect Of Oxygen Partial Pressure On the Phase Transformmentioning

confidence: 99%

The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of ZnTiO₃ Thin Films

Teoh

Lin

et al. 2012

Journal of Nanomaterials

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Mg-doped zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering. Subsequent annealing of the as-deposited films was performed at a temperature ranging from 600 to C for 2 hours with a heating rate of C/min in air. It was found that the as-deposited films were amorphous and contained 2.77 at.% magnesium. This was further confirmed by the onset of crystallization that took place at annealing temperatures of C. The results showed that single Zn2Ti3O8phase was existed at C. When annealing is at C, the results revealed that mainly a hexagonal ZnTiO3phase accompanying a Zn2Ti3O8minor phase was observed. When annealing is at C, the results showed that single hexagonal ZnTiO3phase is stable at C. It means that ZnTiO3phase containing no Mg is unstable at C and is decomposed from hexagonal ZnTiO3to cubic Zn2TiO4and rutile TiO2at C. In addition, the effect of oxygen partial pressure for the films deposited on the phase transformations and microstructures of zinc titanites thin film was investigated.

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Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Cited by 53 publications

References 30 publications

Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Heteroepitaxy and crystallographic orientation transition in La_1.875Sr_0.125NiO₄thin films on single crystal SrTiO₃

The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of ZnTiO₃ Thin Films

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Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Cited by 53 publications

References 30 publications

Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Heteroepitaxy and crystallographic orientation transition in La1.875Sr0.125NiO4thin films on single crystal SrTiO3

The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of ZnTiO3 Thin Films

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Heteroepitaxy and crystallographic orientation transition in La_1.875Sr_0.125NiO₄thin films on single crystal SrTiO₃

The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of ZnTiO₃ Thin Films