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Design principles of a new class of microwave thin film bulk acoustic resonators with multiband resonance frequency switching ability are presented. The theory of the excitation of acoustic eigenmodes in multilayer ferroelectric structures is considered, and the principle of selectivity for resonator with an arbitrary number of ferroelectric layers is formulated. A so called “criterion function” is suggested that allows to determine the conditions for effective excitation at one selected resonance mode with suppression of other modes. The proposed theoretical approach is verifiedusing thepreexisting experimental data published elsewhere. Finally, the possible application of the two ferroelectric layers structures for switchable microwave overtone resonators, binary and quadrature phase-shift keying modulators are discussed. These devices could play a pivotal role in the miniaturization of microwave front-end antenna circuits.

A method for selective normal mode excitation in thin film bulk acoustic wave resonators, based on multilayer structures with any number of ferroelectric films in the paraelectric phase, is presented. The possibility to control the excitation of thin film bulk acoustic resonators' normal modes by simultaneous manipulating both the polarities and the magnitudes of the dc bias voltages applied to the ferroelectric layers is demonstrated. The proposed method was verified using the Lakin's model, modified to describe the electro-mechanical behavior of a structure with four active ferroelectric layers

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