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We report the characteristics of chemical lift-off method using metallic buffer layer and its application to the real light emitting devices.Recently, differently from the conventional method, metallic buffer layer was introduced for the GaN growth 1 .We fabricated GaN-based light-emitting diodes (LEDs) by metal-organic vapor-phase epitaxy on two different GaN templates with the same LED structure: one on thin GaN template with LT-GaN buffer layer grown by MOVPE, and the other on GaN template with CrN buffer layer by HVPE. Compared with the metal buffer GaN