The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

Ha, Jun‐Seok; Lee, S.W.; Lee, Hyun-Jae; Lee, Hyojong; Lee, S.H.; Goto, Hiroki; Kato, Tatsuya; Fujii, K.; Cho, M.W.; Yao, Takafumi

doi:10.1109/lpt.2007.912491

Cited by 110 publications

(54 citation statements)

References 17 publications

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“…In the case of the CrN growth the growth range is very wide which means that we can easily growth the high quality CrN. In addition, the pattern formation is very easy using the selective etching by Cr-etchant [25,26].…”

Section: Introductionmentioning

confidence: 99%

Position-controlled vertical arrays of single-crystalline ZnO nanowires on periodically polarity inverted templates

Park

Yao

2012

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Position-controlled vertical arrays of single-crystalline ZnO nanowires on periodically polarity inverted templates

Park

Yao

2012

Journal of Alloys and Compounds

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“…To unlock the full potential of the devices operating under high currents, it is imperative to find solutions for effective heat dissipation, because the devices, when operated at high driving currents, not only produce high luminance but also inevitably generate significant amounts of heat 3,7 . It has been reported that the optical power or luminous efficacy is degraded with the increasing junction temperature (T j ) due to the thermal activation of non-radiative electron-hole recombination and/or electrostatic discharge [7][8][9] . Moreover, the number of defects responsible for non-radiative recombination also increases with T j 10 .…”

mentioning

confidence: 99%

“…This approach has a significant advantage in terms of substrate heat dissipation 3 , which is a key for the realization of bright and durable LEDs. However, there also exist several long-standing drawbacks such as low device yield, difficulty in separating the epitaxial layers from the singlecrystal substrate, complicated fabrication processes and so on 7,9,13 . Consequently, the search for the development of an effective heat dissipation means is intensifying to realize a robust solid-state lighting device with long life time.…”

mentioning

confidence: 99%

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern

et al. 2013

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The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates highoperating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the selfheating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

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“…Typical LED devices usually take a shape of the mesa-structure [7][8][9]. The reason is that the mesa structure has advantages in that contacts are readily implementable, based on the epi-grown p-n junction [10,11]. The performance of LED devices with a mesa structure depends on lateral carrier injection.…”

Section: Introductionmentioning

confidence: 99%

Effects of Current Spreading in GaN-based Light-emitting Diodes Using ITO Spreading Pad

Kim¹,

Kım²,

Park³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In conventional LEDs, a mesa-structure is usually used and it causes the current to be overcrowded in a specific region. We propose a novel structure of GaN-based LED to overcome this problem. In order to distribute the current in an active region, a spreading pad is inserted at the p-type region in the GaN based LED device. The inserted spreading pad helps the current flow because it is more conductive than the p-type GaN layer. By performing electrical and optical simulations, the effects of the spreading pad insertion are confirmed. The results of electrical simulation show that the current spreads more uniformly and more radiative recombination is produced as well. Moreover, from the optical simulation, it is revealed that the ITO is less absorptive material than p-GaN if the condition of specific wavelength sources is satisfied. Considering all of the results, we can conclude that the luminescent power is enhanced by the spreading pad.

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The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

Cited by 110 publications

References 17 publications

Position-controlled vertical arrays of single-crystalline ZnO nanowires on periodically polarity inverted templates

Position-controlled vertical arrays of single-crystalline ZnO nanowires on periodically polarity inverted templates

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern

Effects of Current Spreading in GaN-based Light-emitting Diodes Using ITO Spreading Pad

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