Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications [1][2][3][4][5][6][7][8][9]. The edge states are hosted by a magnetic energy gap at the Dirac point[2] but all attempts to observe it directly have been unsuccessful. The size of this gap is considered the clue to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature T C [8,9]. Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi 2 Te 3 films which is present only below T C . Surprisingly, the gap turns out to be ∼ 90 meV wide, which not only exceeds k B T at room temperature but is also 5 times larger than predicted by density functional theory [10]. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the center of the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted [11]. Mn-doped Bi 2 Se 3 forms a similar heterostructure, however, only a large, albeit nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi 2 Te 3 with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi 2 Se 3 the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.We thank B. Henne, F. Wilhelm, and A. Rogalev for support of the XANES and EX-AFS measurements at ID 12 and BM23 beam lines of the ESRF, V. Holý for advices on the structure model, W. Grafeneder for the TEM sample preparation and G. Bihlmayer and A. Ernst for helpful discussions. S.A.K and J.M. are grateful for support from CEDAMNF (CZ.02.1.01/0.0/0.0/15 003/0000358) of Czech ministry MSMT.

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is potentially useful for high‐precision metrology, edge channel spintronics, and topological qubits.  The stable 2+ state of Mn enables intrinsic magnetic topological insulators. MnBi2Te4 is, however, antiferromagnetic with 25 K Néel temperature and is strongly n‐doped. In this work, p‐type MnSb2Te4, previously considered topologically trivial, is shown to be a ferromagnetic topological insulator for a few percent Mn excess. i) Ferromagnetic hysteresis with record Curie temperature of 45–50 K, ii) out‐of‐plane magnetic anisotropy, iii) a 2D Dirac cone with the Dirac point close to the Fermi level, iv) out‐of‐plane spin polarization as revealed by photoelectron spectroscopy, and v) a magnetically induced bandgap closing at the Curie temperature, demonstrated by scanning tunneling spectroscopy (STS), are shown. Moreover, a critical exponent of the magnetization β ≈ 1 is found, indicating the vicinity of a quantum critical point. Ab initio calculations reveal that Mn–Sb site exchange provides the ferromagnetic interlayer coupling and the slight excess of Mn nearly doubles the Curie temperature. Remaining deviations from the ferromagnetic order open the inverted bulk bandgap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators.

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We present Raman, terahertz transmission, and transport measurements on (Bi1−xInx)2Se3 films to study the evolution of phonon modes and resistivity with an increasing indium content across the metal-insulator phase transition. The frequencies of two Raman-active modes Eg2 and A1g2 as well as an infrared-active mode Eu increase with an increasing indium content due to the smaller atomic weight of indium compared to bismuth. Terahertz data are fitted by a Drude-Lorentz model. Drude scattering rates increase from 47 to 75 cm−1 with an increasing indium content from 0% to 16% due to stronger impurity scattering. The carrier concentration drops significantly for x = 24%. The temperature dependence of the resistivity switches from metallic at x = 16% to insulating at x = 24%, indicating a metal-insulator transition in between.

We employ infrared transmission spectroscopy to explore the temperature-dependent absorption edge and electron-phonon (e-ph) interaction in topological insulator Bi2Se3 and band insulator (Bi0.89In0.11)2Se3 films. Upon heating from 5 K to 300 K, the absorption edge shifts from 262 to 249 meV for Bi2Se3 and from 367 to 343 meV for (Bi0.89In0.11)2Se3. By analyzing the temperature dependence of the Urbach tail, the significant role of Raman-active phonon mode Eg2 in e-ph interaction is identified, which agrees well with the ab initio calculation.