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Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi2 nanowires and 4. self-assembled growth of NiSi2 and α-FeSi2 nanowires by nitride mediated epitaxy.

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