Ru films were fabricated by chemical vapor deposition using Ru(C 5 H 5 ) 2 and O 2 . The deposition of Ru film was controlled by the surface reaction kinetics as the rate limiting step with activation energy of 2.48 eV below 250 • C and by the mass transport process above 250 • C. Ru films had a polycrystalline structure and showed low resistivity of about 12 µ cm. Ru films deposited at 230 • C showed excellent step coverage. We applied Ru films prepared by chemical vapor deposition to the bottom electrode of a Ba 0.25 Sr 0.75 TiO 3 capacitor and obtained good electrical characteristics.

We have analyzed the reciprocating motion of a magnet levitated above a YBa 2 Cu 3 O x superconductor using a nonlinear mechanical model with a mass, a spring, and a dashpot. We introduced velocity dependence of the pinning effect and the distribution of the pinned flux lines against the strength of the pins into the mechanical model. Improved agreement between experimental reciprocation waveforms and simulated ones was achieved. Nonlinear characteristics of reciprocating motion of the magnet above a superconductor were successfully explained with the improved dragged spring model.

The characteristics of the ultrathin Ta203 film capacitors with Ru bottom electrodes have been investigated. Ru films are deposited on n"-Si by sputtering in 10% 02/Ar ambient, for the bottom electrode, and Ta20,5 films are deposited by chemical vapor deposition using Ta(0C3H5),3 and 02. By 03 plasma treatment at 400°C after N2 thermal treatment at 700°C, excellent properties, are obtained such that the effective 5i0, film thickness is 0.68 nm for 6 nm thick Ta05 film and the leakage current is less than 1 >( i02 A/cm2 between the range of -2.1 and +1.8 V The Ta205 film with a Ru bottom electrode is one of the most suitable structures for Gbit dynamic random access memory capacitors. ABSTRACT The characteristics of the ultrathin Ta203 film capacitors with Ru bottom electrodes have been investigated. Ru films are deposited on n-Si by sputtering in 10% 02/Ar ambient, for the bottom electrode, and Ta205 films are deposited by chemical vapor deposition using Ta(0C2H5)5 and 07. By 03 plasma treatment at 400°C after N2 thermal treatment at 700°C, excellent properties, are obtained such that the effective Sb, film thickness is 0.68 nm for 6 nm thick Ta,05 film and the leakage current is less than 1 x 10 A/cm2 between the range of -2.1 and +1.8 V. The Ta303 film with a Ru bottom electrode is one of the most suitable structures for Gbit dynamic random access memory capacitors. ABSTRACT A low dose and moderate temperature two-stage procedure for ultrathin buried oxide preparation, using Ct and H1 implantations as stimulating factors, is proposed, theoretically studied, and experimentally validated. The process kinetics was theoretically studied by computer simulations. The optimum technological conditions are investigated and discussed in detail. Models for the induced Sb1 synthesis are developed and compared with experimental data. ABSTRACT A low dose and moderate temperature two-stage procedure for ultrathin buried oxide preparation, using C and H implantations as stimulating factors, is proposed, theoretically studied, and experimentally validated. The process kinetics was theoretically studied by computer simulations. The optimum technological conditions are investigated and discussed in detail. Models for the induced SiO, synthesis are developed and compared with experimental data.

An excellent 64Mb chainFeRAM TM using a highly reliable capacitor with damage-robust MOCVD-PZT and SrRuO 3 /IrO 2 top electrode (TE) is successfully demonstrated for the first time. A very large signal margin of 540mV at 1.8V is achieved for the capacitor as small as 0.19µm 2 . Large sensing margin is well maintained after 85°C storage, and 10 years lifetime is successfully guaranteed. The combination of damage-robust MOCVD-PZT and optimized SrRuO 3 /IrO 2 TE as well as a sophisticated 'chain' structure that has a small bit line capacitance (Cb) nature shows excellent reliability and scalability. This work demonstrates that high density 256Mb chain FeRAM with 0.1µm 2 planar capacitor can be realized.

No abstract