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Boron-doped Czochralski grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this topic, only a few studies have directly investigated the precursor of the defect responsible for this degradation. In this study, using the photoconductance decay measurement method, we identify the precursor of the defect responsible for light-induced degradation. By comparing the photoconductance decay of samples in the different states, we observe the presence of a minority carrier trap in the annealed state which is not present after degradation. Trap annihilation shows a clear anticorrelation with the generation of the recombination active boron-oxygen defect, as determined from minority carrier lifetime measurements. Furthermore, it is concluded that a model based on a single-level trap cannot explain the doping-dependent measurements, meaning that the detected trap has two or more energy levels.

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A partially hydrogenated graphene sheet with C4H stoichiometry where the hydrogen atoms self‐assemble to a para‐type chemisorption pattern in which the hydrogen atoms are located at opposite sides of the hexagons is reported. , Danny Haberer, Hermann Sachdev, Stephan Irle, Alexander Grüneis, and co‐workers describe the synthesis and in situ characterization by pho‐toemission spectroscopy of this new compound.