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Organic materials are now being used in a wide range of microelectronic applications in parallel with inorganic materials, because of their superior properties, environmental safety, and low cost. This paper describes the characterization of Aloe vera gel (AVG), a new organic dielectric material. The surface morphology, spatial distribution of elements, and structural characteristics of an AVG layer were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD), respectively. The resistance of the AVG layer, determined using a four-probe station, was 640 Ω. EDX showed that the elements contained in the layer were carbon, oxygen, aluminum, silicon, calcium, potassium, and copper. The XRD results suggested that the sample primarily consisted of bornite (Cu 5 FeS 4 ), geerite (Cu 8 S 5 ), sal ammoniac (NH 4 Cl), and carobbite (KF).

RF MEMS technology can offer enhanced performance and have potential prerogatives over the conventional solid-state devices. RF MEMS Switches can be used because of their extensive electrical characterization in order to the dynamic response in low voltage. This paper presented an implemented design of a RF MEMS switch using ANSYS. After comparing Silicon, Gold and Aluminium material model, this paper also report the best RF MEMS switch model to achieve low voltage, switching frequency and low insertion loss. With applying same voltage on all models, this paper showed the Gold material model gives the most suitable result.

Although large electronic systems can be constructed almost entirely with digital techniques, many systems still have analog components and current mirror is the core structure for almost all analog and mixed mode circuits. It determines the performance of analog structures, which largely depends on their characteristics. In this paper, we have analyzed a basic type as well as a cascade type of current mirror using enhancement type MOSFET and study different parameters like minimum output voltage, equivalent resistance and output sink current characteristics etc.