This paper presents a study on the dielectric behavior of SU-8 photoresist. We present measurements on the leakage current levels through SU-8 layers of varying thickness. The leakage current is dominated by thermionic emission. We have further determined the dielectric strength of SU-8 to be 4.4 MV cm −1 . The remarkably high dielectric strength allows the material to be used for high-voltage applications.

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In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is hased on the precise determination of the gate voltage dependent ideality factor of the suhthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape.

In 2000, the requirements for a large TPC for experiments at a new linear collider were formulated. Both the GEM and Micromegas gas amplification systems had matured, such that they could be practically applied. With the Medipix chip, a pixel-segmented anode readout became possible, offering an unprecedented level of granularity and sensitivity. The single electron sensitive device is a digital detector capable to record and transfer all information of the primary ionization, provided that it can be made discharge proof.